|
Parameter |
NMOS |
PMOS |
Units |
Source |
Description |
|
VTO KP GAMMA PHI LAMBDA RD RS CBD CBS IS PB CGSO CGDO CGBO RSH CJ MJ CJSW MJSW JS TOX NSUB NSS NFS TPG XJ LD UO VMAX |
0.7 40E-6 1.1 0.6 0.01 (40) (40) 0.7 3.0E-10 3.0E-10 5.0E-10 25 4.4E-10 0.5 4.0E-10 0.3 1.0E-5 5.0E-8 1.7E16 0 0 1 6.0E-7 3.5E-7 775 1.0E5 |
-0.8 12E-6 0.6 0.6 0.03 (100) (100) 0.6 2.5E-10 2.5E-10 5.0E-10 80 1.5E-4 0.6 4.0E-10 0.6 1.0E-5 5.0E-8 5.0E15 0 0 1 5.0E-7 2.5E-7 250 0.7E5 |
V (A/V2) (V0.5) V 1/V ohms ohms F F A V F/m F/m F/m Ohms/sq. (F/m2) - F/m - (A/m2) m (1/cm3) (1/cm2) (1/cm2) - m m (cm2/Vs) m/s |
(1) (5) (1) (3) (5) (2) (2) (2) (2) (2) (1) (1) (1) (1) (1) (1) (1) (1) (1) (1) (1) (1) (3) (3) (3) (1) (1) (1) (1) |
-zero
bias threshold voltage -transconductance
parameter -bulk
threshold parameter -surface
potential -channel-length
modulation -drain
ohmic resistance (w=6m) -source
ohmic resistance(²) -zero
bias B-D juction cap. -zero
bias B-S juction cap. -bulk
junction sat.current -bulk
junction potential; -G-S
overlap capacitance -G-D
overlap capacitance -G-bulk
overlap capacitance -diffusion
sheet resistance -zero
bias bulk junction cap. -bulk
junction grading coef. -bulk
junction sidewall cap. -sidewall
cap. Grading coef. -bulk
jinction sat.current -oxide
thickness -substrate
doping -surface
state density -fast
surface state density -type
of gate material -metallurgical
junction depth -lateral
diffusion -surface
mobility -maximum
drift velocity |
SPICE Level 3 Parameters
|
Parameter |
NMOS |
PMOS |
Units |
Source |
Description |
|
THETA KAPPA ETA |
0.11 1.0 0.05 |
0.13 1.0 0.3 |
1/V - - |
(1) (1) (1) |
-mobility
modulation -saturation
field factor -static
feedback |
Other Electrical Parameters
|
|
Capacitance (pF/mm2) |
Edge
Component (pF/mm) |
Source |
|
Gate
(Cox) Metal1
– Field Metal1
– Poly Metal1
– Diffusion Poly
– Field Metal2
– Field Metal2
– Diffusion Metal2
– Poly Metal2
– Metal1 Capacitor
P + - Poly (0.1%/V
linearity) |
6.9E-4 2.7E-5 5.0E-5 5.0E-5 6.0E-5 1.4E-5 1.6E-5 2.0E-5 2.5E-5 6.9E-4 |
0.5E-4 0.4E-4 0.2E-4 2.0E-5 0.5E-4 |
(1) (1) (1) (1) (1) (4) (4) (4) (4) (*) (1) |
|
Resistance |
(ohms/sq.) |
Source |
|
N+ Diffusion P+ Diffusion N+ Poly Capacitor
P+ P-well Metal1 Metal2 3 ´ 3 metal1
– P + Diffusion Contact 3 ´ 3 metal1
– N + Diffusion Contact 3
´ 3 metal1 – N + Poly
Contact |
25 80 18 300 4K 0.035 0.030 121 44 25 |
(1) (1) (5) (1) (1) (4) (4) (5) (5) (5) |
Maximum operating voltage: 5 volts.
Sources: (1) D. Smith of NTE, presented at CMC
Workshop June 6-7, 1985.
(2) Calculated by SPICE: e.g. –RSH is used to calculate RD & RS.
(3) SPICE default.
(4) D. Smith of NTE, April 1986.
(5) Typical
(*) Estimate – Capacitors assumed to be equal to gate capacitance.