Two-diode model revisited: parameters extraction from semi-log plots of i-v data
Yordanov, G. H., Midtg?rd, O. M. and Saetre, T. O.
2010
25th European Photovoltaic Solar Energy Conference and Exhibition /
5th World Conference on Photovoltaic Energy Conversion, 6-10 September 2010, Valencia, Spain
Module Series Resistance, p-n Junction Ideality Factor, Polycrystalline Silicon
Yordanov, G. H., Midtg?rd, O. M. and Saetre, T. O., (2010), "Two-diode model revisited: parameters extraction from semi-log plots of i-v data", 25th European Photovoltaic Solar Energy Conference and Exhibition /
5th World Conference on Photovoltaic Energy Conversion, 6-10 September 2010, Valencia, Spain.
| Abstract: |
| This paper presents an improved method to extract physically meaningful parameters from outdoor I-V data of polycrystalline-Si PV modules. The two-diode model of a PV cell is adapted for modules. A novel algorithm is devised to estimate the series resistance from I-V data sets. The ideality factor and the reverse saturation current of the diffusion diodes are then calculated from partially linear semi-logarithmic plots. The complexity and ambiguity typical for non-linear curve fitting are thus avoided. The method is applied to outdoor I-V curves from polycrystalline-Si modules, and preliminary results are presented. A new definition of the local ideality factor is introduced. It compensates for the series-resistance effect at higher voltages, such that a constant ideality factor is obtained for polycrystalline-Si modules in this range of voltages.
Keywords: |
|
|
This publication in whole or part may be found online at:  here. |
|