Researcher ID   https://publons.com/researcher/1359846/m-zahangir-kabir/

   ORCID ID   https://orcid.org/0000-0003-0905-0322

 

 

Selected Publications (Dr. M. Z. Kabir, Professor at Concordia University)

(* indicates a supervised student)

 

Book Chapters

B5    M. Z. Kabir, “Basic principles of solid state x-ray radiation detector operation”, in Handbook of II-VI Semiconductor-Based Sensors and Radiation Detectors: Vol. 3, Sensors Biosensors and Radiation Detectors, ed. by G. Korotcenkov, (Springer Nature, Switzerland AG, 2023), Chapter 1.

 

B4    M. Z. Kabir, “X-Ray Photoconductivity and Typical Large Area X-Ray Photoconductors”, in Photoconductivity and Photoconductive Materials, ed. by S. O. Kasap, (Wiley & Sons, Chichester, UK, 2022), Chapter 15.

 

B3    S. O. Kasap and M. Z. Kabir, “X-Ray Detectors: Direct Conversion Flat Panel X-Ray Imagers”, Springer Handbook of Semiconductor Devices, ed: M. Rudan et al. (Springer Nature, Switzerland AG, 2022), Chapter 20.

 

B2   M. Z. Kabir and S. O. Kasap, “Photoconductors for Direct Conversion X-Ray Image Detectors”, Springer Handbook of Electronic and photonic Materials, 2nd edition, ed. by S. O. Kasap, (Springer Nature, Switzerland AG, 2017), Chapter 45.

 

B1   M. Z. Kabir, S. O. Kasap, and J. A. Rowlands, “Photoconductors for X-ray Image Sensors”, Springer Handbook of Electronic and photonic Materials, ed. by S. O. Kasap, (Springer Nature, Switzerland AG, 2006), Chapter 48.

 

 

 

Refereed Journal Papers (from 2008)

 

J65   M. Z. Kabir, Analytical Model for Current–Voltage Characteristics in Perovskite Solar Cells Incorporating Bulk and Surface Recombination, Micromachines, vol. 15, 972 (2024).

 

J64   M. H. Zeb*, A. Rehman, M. Siddiqah, Q. Bao, B. Shabbir, M. Z. Kabir, Machine Learning‐Enhanced Prediction of Inorganic Semiconductor Bandgaps for Advancing Optoelectronic Technologies, Advanced Theory and Simulations, vol. 7, 2400190 (2024).

 

J63   S. M. Shuvoraj*, M. Z. Kabir, Current–voltage characteristics of perovskite solar cells incorporating bulk and surface recombination: comparison of a physics-based model calculations with experiments, Journal of Materials Science: Materials in Electronics, vol. 35, 191 (2024). https://rdcu.be/dwwXe

 

J62   Robin Ray*, M. Z. Kabir, Comparative Performance Evaluation of Conventional and Folded Detector Structures: Application to Perovskite X-ray Detectors, Electronics, vol. 12, 2976 (2023). https://www.mdpi.com/2079-9292/12/13/2976

 

J61   M. Z. Kabir, Effects of Charge Carrier Trapping on Image Resolution of Multilayer Photoconductive Detectors: Application to Amorphous Selenium X-ray Detectors. Radiation, 2, 91-99 (2022). https://www.mdpi.com/2673-592X/2/1/7

 

J60    D. Hossain* and M. Z. Kabir, “Diffusion coefficient of charge carriers in disordered semiconductors retaining a combination of exponential and Gaussian mobility-gap states: application to amorphous selenium”, J. Vac. Sci. Technol. B, 39, 062211 (2021).

 

J59   M. Z. Kabir, “A Physics-Based Analytical Model for Current–Voltage Characteristics of Perovskite Solar Cells Incorporating Bulk Recombination”, Energies, vol. 14, pp. 3868 (2021).

 

J58   A. Hoq*, D. Panneerselvam* and M. Z. Kabir, “Sensitivity reduction mechanisms in organic perovskite X-ray detectors”, Journal of Materials Science: Materials in Electronics, vol. 32pp. 16824–16830 (2021). https://link.springer.com/article/10.1007/s10854-021-06240-7

 

J57   S. O. Kasap, M. Z. Kabir, K.O. Ramaswami, R.E. Johanson, R. J. Curry “Charge collection efficiency in the presence of non-uniform carrier drift mobilities and lifetimes in photoconductive detectors”, J. Applied Physics, vol. 128, 124501, 2020. https://doi.org/10.1063/5.0017521

 

J56   Mithun Roy* and M. Z. Kabir, Harmonic instability in a quantum cascade laser with Fabry–Perot cavity”, J. Applied Physics, vol. 128, 043105 (2020); https://doi.org/10.1063/5.0006463

 

J55   S. M. Mirjalili*, H. Taleb, M. Z. Kabir, and P. Bianucci, Design optimization of orbital angular momentum fibers using the gray wolf optimizer”, Applied Optics, Vol. 59, pp. 6181-6190 (2020).

 

J54   A. Camlica, M. Z. Kabir, J. Liang, P. M. Levine, D. L. Lee, and K. S. Karim, “Use of Pulse-Height Spectroscopy to Characterize the Hole Conduction Mechanism of a Polyimide Blocking Layer Used in Amorphous-Selenium Radiation Detectors”, IEEE Transactions on Electron Devices, vol. 67, pp. 633 – 639, 2020. 10.1109/TED.2019.2958789

 

J53   S. M. Arnab* and M. Z. Kabir, A Novel Amorphous Selenium Direct Conversion Avalanche Detector Structure for Low Dose Medical X-ray Imaging”, IEEE Transactions on Radiation and Plasma Medical Sciences, vol. 4, pp. 319 - 326, 2020.

 

J52   M. Z. Kabir, S. M. Arnab* and N. Hijazi*, “Electron-hole Pair Creation Energy in Amorphous Selenium: Geminate versus Columnar recombination”, Journal of Materials Science: Materials in Electronics, Vol. 30, pp. 21059 –21063, 2019.

 

J51   M. Zoghi* and M. Z. Kabir, “Effects of uniaxial strain on the performance of armchair graphene nanoribbon resonant tunneling diode”, Semiconductor Science and Technology, vol. 34, 055012, 2019.

 

J50   S. O. Kasap, K. Ramaswami, M. Z. Kabir, R. Johanson, “Corrections to the Hecht Collection Efficiency in Photoconductive Detectors under Large Signals: Non-Uniform Electric Field due to Drifting and Trapped Unipolar Carriers”, J. Physics D: Applied Physics, vol. 52, 135104, 2019.

 

J49   M. Zoghi*, A. Y. Goharrizi, S. M. Mirjalili, and M. Z. Kabir, Electronic and Transport Properties of Zigzag Carbon Nanotubes upon the Presence of Periodical Antidot and Boron/Nitride Doping Defects”, Semiconductor Science and Technology, vol. 33, 065015, 2018.

 

J48   N. Hijazi*, D. Panneerselvam* and M. Z. Kabir, “Electron-hole pair creation energy in amorphous selenium for high energy photon excitation”, Journal of Materials Science: Materials in Electronics, vol. 29, pp. 486–490, 2018. 

 

J47   S. M. Arnab* and M. Z. Kabir, “Impact of Charge Carrier Trapping on Amorphous Selenium Direct Conversion Avalanche X-ray Detectors”, Journal of Applied Physics, vol. 112, 134502, 2017.

 

J46   S. M. Arnab* and M. Z. Kabir, Impact of Lubberts Effect on Amorphous Selenium Indirect Conversion Avalanche Detector for Medical X-ray Imaging”, IEEE Transactions on Radiation and Plasma Medical Sciences, vol. 1, pp. 221-228, 2017.

 

J45   D. Panneerselvam* and M. Z. Kabir, “Evaluation of organic perovskite photoconductors for direct conversion X-ray imaging detectors”, Journal of Material Science: Materials in Electronics, vol. 28, pp. 7083–7090, 2017.

 

J44   N. Hijazi* and M. Z. Kabir, “Modeling of Columnar recombination for high-energy photon generated electrons and holes in amorphous selenium”, Journal of Material Science: Materials in Electronics, vol. 28, pp. 7036-7041, 2017. 

 

J43   M. M. Saleheen*, Salman M. Arnab*, and M. Z. Kabir, (invited) “Analytical model for voltage-dependent photo and dark currents in bulk heterojunction organic solar cells”, Energies, vol. 9, p 412, 2016; doi:10.3390/en9060412

 

J42   N. Hijazi* and M. Z. Kabir, “Mechanisms of charge photogeneration in amorphous selenium under high electric fields”, Journal of Material Science: Materials in Electronics, vol. 27, pp 7534–7539, 2016. 

 

J41   S. Abbaszadeh, S. Ghaffari, S. Siddiquee*, M. Z. Kabir and K. S. Karim, “Characterization of lag signal in amorphous selenium detectors”, IEEE Transaction on Electron Devices, vol. 63, pp. 704-709, 2016.

 

J40   S. Siddiquee* and M. Z. Kabir, “Modeling of transient photocurrent in X-ray detectors: application to a-Se”, Physica Status Solidi C, vol. 13, pp. 73-76, 2016.

 

J39   S. Siddiquee* and M. Z. Kabir, “Modeling of photocurrent and lag signals in amorphous selenium X-ray detectors”, Journal of Vacuum Science and Technology A, vol. 33, pp. 041514, 2015.

 

J38   M. Z. Kabir, “Dark current mechanisms in amorphous selenium-based photoconductive detectors: an overview and re-examination”, Journal of Material Science: Materials in Electronics, vol. 26, pp. 4659–4667, 2015.

 

J37   N. Hijazi* and M. Z. Kabir, “Mechanisms of temperature and field-dependent effective drift mobilities and impact ionization coefficients in amorphous selenium”, Canadian Journal of Physics, vol. 93 (11), pp. 1407-1412, 2015.

 

J36   M. Z. Kabir and N. Hijazi*, Temperature and field dependent effective hole mobility and impact ionization at extremely high fields in amorphous selenium”, Applied Physics Letters, vol. 104, pp. 192103, 2014.

 

J35   S. M. Arnab* and M. Z. Kabir, An analytical model for analyzing the current-voltage characteristics of bulk heterojunction organic solar cells”, Journal of Applied Physics, vol. 115, pp. 034504, 2014.

 

J34   F. Manouchehri*, P. Valizadeh, and M. Z. Kabir, “Determination of subband energies and 2DEG characteristics of AlxGa1-x N/GaN heterojunctions using variational methodJournal of Vacuum Science and Technology A, vol. 32, pp. 021104, 2014.

 

J33   F. Manouchehri*, P. Valizadeh, and M. Z. Kabir, “Physics-based analysis of low frequency drain noise-current in AlxGa1-xN/GaN HFETsJ. Physics D: Applied Physics, vol. 47, pp. 085104, 2014.

 

J32   M. Z. Kabir, “Transient and steady-state dark current mechanisms in polycrystalline mercuric iodide X-ray imaging detectors”, Nuclear Instruments and Methods in Physics Research A, vol. 736, pp. 156–160, 2014.

 

J31   M. Z. Kabir and S.-A. Imam*, “Determination of deep trapping states of the hole blocking layer in multilayer amorphous selenium X-ray detectors using transient dark current analysis”, Canadian Journal of Physics, vol. 92, pp. 641-644, 2014.

 

J30   S. M. Arnab* and M. Z. Kabir, “Modeling of the Effects of Charge Transport on Voltage-Dependent Photocurrent in Ultra-Thin CdTe Solar Cells”, Journal of Vacuum Science and Technology A, vol. 31, pp. 061201, 2013.

 

J29   F. Manouchehri*, P. Valizadeh, and M. Z. Kabir, “Temperature-Dependent Investigation of Low Frequency Noise Characteristics of Mesa-, Fin-, and Island-Isolated AlGaN/GaN HFETsSolid State Electronics, vol. 89, pp. 01, 2013.

 

J28   M. Z. Kabir, and S. -A. Imam*, “Transient and steady-state dark current mechanisms in amorphous selenium avalanche radiation detectors”, Applied Physics Letters, vol. 102, pp. 153515, 2013.

 

J27   S. A. Mahmood*, M. Z. Kabir, O. Tousignant, and J. Greenspan “Investigation of Ghosting Recovery Mechanisms in Selenium X-ray Detector Structures for Mammography”, IEEE Transaction on Nuclear Science, vol. 59, pp. 597-604, 2012.

 

J26   M. A. Mannan*, M. S. Anjan*, and M. Z. Kabir, “Modeling of the current-voltage characteristics of thin film solar cells”, Solid State Electronics, vol. 63, pp. 49-54, 2011.

 

J25   M. S. Anjan* and M. Z. Kabir, “Modeling of the current-voltage characteristics of CdS/CdTe solar cells”, Physica Status Solidi A, 208, no. 8, pp. 1813-1816, 2011.

 

J24   M. Z. Kabir, M. W. Rahman*, and W. Y Shen*, “Modelling of DQE of direct conversion X-ray imaging detectors incorporating charge carrier trapping and K-fluorescence,” IET Circuits Devices and Systems, vol. 5, pp. 222-231, 2011.

 

J23   S. A. Mahmood* and M. Z. Kabir, “Dark current mechanisms in stabilized amorphous selenium based n-i detectors for x-ray imaging applications”, Journal of Vacuum Science and Technology A, vol. 29, pp. 031603, 2011.

 

J22   M. H. Chowdhury* and M. Z. Kabir, “Electrical properties of grain boundaries in polycrystalline materials under intrinsic or low doping”, Journal of Physics D: Applied Physics, vol. 44, pp. 015102, 2011.

 

J21   M. Z. Kabir, L. Chowdhury, G. DeCrescenzo, O. Tousignant, S. O. Kasap, and J. A. Rowlands, “Effect of repeated x-ray exposure on the resolution of amorphous selenium based x-ray imagers,” Medical Physics, vol. 37, pp. 1339-1349, 2010.

 

J20   S. A. Mahmood*, R V R Murthy, M Z Kabir and V Dutta, "The role of bulk and interface states on performance of a-Si:H p-i-n solar cells using reverse current-voltage technique", J. Phys. D: Applied Physics, vol. 42, 145115, 2009.

 

J19   S. A. Mahmood* and M. Z. Kabir, "Modeling of transient and steady-state dark current in amorphous silicon p-i-n photodiodes", Current Applied Physics, vol. 9, pp. 1393–1396, 2009.

 

J18  F. Manouchehri*, M. Z. Kabir, O. Tousignant, H. Mani, and V. K. Devabhaktuni, "Time and exposure dependent X-ray sensitivity in multilayer amorphous selenium detectors", J. Phys. D: Applied Physics, vol. 41, 235106, 2008.

 

J17  M. Z. Kabir, "Effects of charge carrier trapping on polycrystalline PbO X-ray imaging detectors", Journal of Applied Physics, vol. 104, 074506, 2008.

 

J16  S. A. Mahmood*, M. Z. Kabir, O. Tousignant, H. Mani, J. Greenspan, and P. Botka , "Dark current in multi-layer amorphous selenium X-ray imaging detectors", Applied Physics Letters, vol. 92, pp. 223506, 2008.

 

 

 

Selected Conference Proceedings

 

C17  A. Camlica, D. Lee, H. Jang, S. M Arnab*, Y. Fang, M. Z. Kabir, K. S. Karim, “Performance of amorphous selenium based unipolar charge sensing detector for photon-counting X-ray imaging,” Proc. SPIE – Int. Soc. Opt. Eng., vol. 11312, 113120G, 2020.

 

C16  N. Hijazi* and M. Z. Kabir, “Modeling of Temperature and Field Dependent Effective Hole Mobility at High Fields in Amorphous Selenium,” Proc. IEEE Nuclear Science Symposium and Medical Imaging Conference, 2014.

 

C15  M. Z. Kabir, and S. -A. Imam*, “Transient and steady-state dark current in amorphous selenium avalanche radiation detectors,” Nanotech 2013, vol. 2, pp. 68-71, 2013.

 

C14  K. N. Sakib*, S. Williamson and M. Z. Kabir, “Cadmium Telluride Solar cell: From Device Modeling to Electric Vehicle Battery ManagementProc. IEEE Transportation Electrification Conference & Expo, pp. 1-8, 2013.

 

C13  K. N. Sakib*, M. Z. Kabir, and S. Williamson, “Cadmium Telluride Solar Cell: From Device Modeling to System Implementation,” Proc. IEEE International Conference on Industrial Technology (ICIT), pp. 1561-1566, 2013. 

 

C12  M. Salehizadeh*, J. Habibi, A.G. Aghdam, and M. Z. Kabir, “Laser cavity squeezing using optimal servo controller in optomechanical sensors” Proceedings of American Control Conference (ACC), pp. 5843-5848, 2012.

 

C11  M. Salehizadeh*, J. Habibi, A.G. Aghdam, and M. Z. Kabir, “H∞ controller design for laser cavity squeezing in optomechanical sensors,” Proceedings of 25th IEEE Canadian Conference on Electrical and Computer Engineering, pp. 1-6, 2012. 

 

C10  F. Manouchehri*, P. Valizadeh, and M. Z. Kabir, “Non-Fundamental Low Frequency Noise Theory to Drain Noise-Current Modeling of AlGaN/GaN HFETs” Proceedings of 21st International Conference on Noise and Fluctuations (ICNF 2011, Toronto), pp. 224-226, 2011.

 

C9    S. A. Mahmood*, M. Z. Kabir, O. Tousignant, J. Greenspan and M. F. Mokam, " Investigation of ghosting recovery techniques and mechanisms in multilayer selenium X-ray detector structures under low bias", Proc. of SPIE, vol. 7622, 762216, 2010.

 

C8   S. A. Mahmood*, M. Z. Kabir, O. Tousignant and H. Mani, “Ghosting and its recovery mechanisms in multilayer selenium detectors for mammography,” Proc. of SPIE, vol. 7258, 725860, 2009.

 

C7   M. Z. Kabir, F. Manouchehri*, S. A. Mahmood*, V. K. Devabhaktuni, O. Tousignant, H. Mani, J. Greenspan, P. Botka, "Modeling of dark current and ghosting in multilayer amorphous selenium X-ray detectors", Proc. of SPIE, vol. 6913, 69133U, 2008.

 

C6   N. N. Safavian, G. R. Chaji, M. Z. Kabir, A. Nathan and J. A. Rowlands, “3-TFT active pixel sensor with correlated double sampling readout circuit for real-time medical x-ray imaging,” IEEE North-East Workshop on Circuits and Systems, pp. 265-268, 2006.

 

C5   M. Z. Kabir, M. Yunus, and S. O. Kasap, “The effects of large signals on charge collection in photoconductive X-ray image detectors,” Proc. IEEE Canadian Conference on Electrical and Computer Engineering, pp. 197-199, 2005. 

 

C4   M. Z. Kabir, M. Yunus, S. O. Kasap, O. Tousignant, H. Mani, and P. Gauthier, “Ghosting mechanisms in a-Se based direct conversion X-ray image sensors,” Proc. SPIE – Int. Soc. Opt. Eng., vol. 5745, pp. 223-231, 2005.

 

C3   M. Z. Kabir, M. Yunus, and S. O. Kasap, “Dependence of X-ray sensitivity of direct conversion X-ray detectors on X-ray exposure and exposure history,” Proc. SPIE – Int. Soc. Opt. Eng., vol. 5368, pp. 170-176, 2004.

 

C2   M. Z. Kabir and S. O. Kasap, “Charge transport and trapping-limited sensitivity and resolution of pixellated X-ray image detectors,” Proc. SPIE – Int. Soc. Opt. Eng., vol. 5030, pp. 26-38, 2003.

 

C1   M. Z. Kabir and S. O. Kasap, “Dependence of the DQE of photoconductive X-ray detectors on charge transport and trapping,” Proc. SPIE – Int. Soc. Opt. Eng., vol. 4682, pp. 42-52, 2002.