Researcher
ID https://publons.com/researcher/1359846/m-zahangir-kabir/
ORCID ID https://orcid.org/0000-0003-0905-0322
Selected Publications (Dr. M. Z. Kabir,
Professor at Concordia University)
(* indicates a supervised student)
Book Chapters
B5 M. Z. Kabir, “Basic principles of solid state x-ray radiation detector operation”, in Handbook of II-VI Semiconductor-Based Sensors and Radiation Detectors: Vol. 3, Sensors Biosensors and Radiation Detectors, ed. by G. Korotcenkov, (Springer Nature, Switzerland AG, 2023), Chapter 1.
B4 M. Z. Kabir, “X-Ray
Photoconductivity and Typical Large Area X-Ray Photoconductors”, in Photoconductivity and Photoconductive Materials, ed. by S.
O. Kasap, (Wiley & Sons, Chichester, UK, 2022),
Chapter 15.
B3 S. O. Kasap and M. Z. Kabir, “X-Ray
Detectors: Direct Conversion Flat Panel X-Ray Imagers”, Springer Handbook of Semiconductor Devices, ed: M. Rudan et al.
(Springer Nature, Switzerland AG, 2022), Chapter 20.
B2 M. Z. Kabir and S. O. Kasap,
“Photoconductors for Direct Conversion X-Ray Image Detectors”, Springer Handbook of Electronic and photonic
Materials, 2nd edition, ed.
by S. O. Kasap, (Springer Nature,
Switzerland AG, 2017), Chapter 45.
B1 M. Z. Kabir, S. O. Kasap, and J. A.
Rowlands, “Photoconductors for X-ray Image Sensors”, Springer Handbook of Electronic and photonic Materials, ed. by S. O. Kasap, (Springer Nature, Switzerland AG, 2006), Chapter 48.
Refereed Journal
Papers (from 2008)
J65 M. Z. Kabir, Analytical Model for
Current–Voltage Characteristics in Perovskite Solar Cells Incorporating Bulk
and Surface Recombination, Micromachines, vol. 15, 972 (2024).
J64 M. H. Zeb*, A. Rehman, M. Siddiqah,
Q. Bao, B. Shabbir, M. Z. Kabir, Machine Learning‐Enhanced Prediction of Inorganic
Semiconductor Bandgaps for Advancing Optoelectronic Technologies, Advanced
Theory and Simulations, vol. 7, 2400190 (2024).
J63 S. M. Shuvoraj*, M. Z. Kabir, Current–voltage characteristics of perovskite solar cells incorporating bulk and surface recombination: comparison of a physics-based model calculations with experiments, Journal of Materials Science: Materials in Electronics, vol. 35, 191 (2024). https://rdcu.be/dwwXe
J62 Robin Ray*, M. Z. Kabir, Comparative Performance Evaluation of Conventional and Folded Detector Structures: Application to Perovskite X-ray Detectors, Electronics, vol. 12, 2976 (2023). https://www.mdpi.com/2079-9292/12/13/2976
J61 M. Z. Kabir, Effects of Charge Carrier Trapping on Image Resolution of Multilayer Photoconductive Detectors: Application to Amorphous Selenium X-ray Detectors. Radiation, 2, 91-99 (2022). https://www.mdpi.com/2673-592X/2/1/7
J60 D. Hossain* and M. Z.
Kabir, “Diffusion coefficient of charge carriers in disordered
semiconductors retaining a combination of exponential and Gaussian mobility-gap
states: application to amorphous selenium”, J.
Vac. Sci. Technol. B, 39, 062211 (2021).
J59 M.
Z. Kabir, “A Physics-Based Analytical Model for Current–Voltage
Characteristics of Perovskite Solar Cells Incorporating Bulk Recombination”, Energies,
vol. 14, pp. 3868 (2021).
J58 A. Hoq*, D. Panneerselvam* and M. Z.
Kabir, “Sensitivity reduction mechanisms in organic perovskite X-ray
detectors”, Journal of Materials Science:
Materials in Electronics, vol. 32, pp. 16824–16830 (2021). https://link.springer.com/article/10.1007/s10854-021-06240-7
J57 S. O. Kasap, M. Z. Kabir,
K.O. Ramaswami, R.E. Johanson, R.
J. Curry “Charge collection efficiency in the presence of non-uniform carrier
drift mobilities and lifetimes in photoconductive detectors”, J. Applied Physics, vol. 128, 124501,
2020. https://doi.org/10.1063/5.0017521
J56 Mithun Roy* and M.
Z. Kabir, “Harmonic instability in a quantum cascade laser
with Fabry–Perot cavity”, J. Applied
Physics, vol. 128, 043105 (2020); https://doi.org/10.1063/5.0006463
J55 S. M. Mirjalili*, H. Taleb, M. Z. Kabir, and P. Bianucci, “Design optimization of
orbital angular momentum fibers using the gray wolf optimizer”, Applied Optics, Vol. 59, pp. 6181-6190
(2020).
J54 A. Camlica, M. Z. Kabir, J. Liang, P. M. Levine, D. L. Lee,
and K. S. Karim, “Use of Pulse-Height Spectroscopy to Characterize the
Hole Conduction Mechanism of a Polyimide Blocking Layer Used in
Amorphous-Selenium Radiation Detectors”,
IEEE Transactions on Electron Devices, vol. 67, pp. 633 – 639, 2020. 10.1109/TED.2019.2958789
J53 S. M. Arnab* and M.
Z. Kabir, “A Novel Amorphous Selenium Direct Conversion
Avalanche Detector Structure for Low Dose Medical X-ray Imaging”, IEEE Transactions on Radiation and Plasma
Medical Sciences, vol. 4, pp. 319 - 326, 2020.
J52 M. Z. Kabir, S. M. Arnab* and N. Hijazi*, “Electron-hole
Pair Creation Energy in Amorphous Selenium: Geminate versus Columnar
recombination”, Journal of Materials
Science: Materials in Electronics, Vol. 30, pp.
21059 –21063, 2019.
J51 M. Zoghi* and M. Z. Kabir, “Effects of uniaxial strain on the performance of armchair
graphene nanoribbon resonant tunneling diode”, Semiconductor Science and Technology, vol. 34, 055012, 2019.
J50 S. O. Kasap, K. Ramaswami, M. Z. Kabir,
R. Johanson, “Corrections to the
Hecht Collection Efficiency in Photoconductive Detectors under Large Signals:
Non-Uniform Electric Field due to Drifting and Trapped Unipolar Carriers”, J. Physics D: Applied Physics, vol. 52,
135104, 2019.
J49 M. Zoghi*, A. Y.
Goharrizi, S. M. Mirjalili, and
M. Z. Kabir, “Electronic and Transport Properties of Zigzag
Carbon Nanotubes upon the Presence of Periodical Antidot and Boron/Nitride
Doping Defects”, Semiconductor Science and Technology,
vol. 33, 065015, 2018.
J48 N. Hijazi*, D. Panneerselvam* and M. Z. Kabir, “Electron-hole pair
creation energy in amorphous selenium for high energy photon excitation”, Journal of Materials Science: Materials in
Electronics, vol. 29, pp. 486–490, 2018.
J47 S. M. Arnab* and M. Z. Kabir, “Impact of Charge Carrier
Trapping on Amorphous Selenium Direct Conversion Avalanche X-ray Detectors”, Journal of Applied Physics, vol. 112,
134502, 2017.
J46 S. M. Arnab* and M.
Z. Kabir, “Impact of Lubberts Effect on Amorphous Selenium
Indirect Conversion Avalanche Detector for Medical X-ray Imaging”, IEEE Transactions on Radiation and Plasma
Medical Sciences, vol. 1, pp. 221-228, 2017.
J45 D. Panneerselvam* and M. Z. Kabir, “Evaluation
of organic perovskite photoconductors for direct conversion X-ray imaging
detectors”, Journal of Material Science:
Materials in Electronics, vol. 28, pp. 7083–7090, 2017.
J44 N. Hijazi* and M. Z. Kabir, “Modeling
of Columnar recombination for high-energy photon generated electrons and holes
in amorphous selenium”, Journal of
Material Science: Materials in Electronics, vol. 28, pp. 7036-7041, 2017.
J43 M. M. Saleheen*, Salman M. Arnab*, and M.
Z. Kabir, (invited) “Analytical model for voltage-dependent
photo and dark currents in bulk heterojunction organic solar cells”, Energies, vol. 9, p 412, 2016;
doi:10.3390/en9060412
J42 N. Hijazi* and M. Z. Kabir, “Mechanisms
of charge photogeneration in amorphous selenium under high electric fields”, Journal of Material Science: Materials in
Electronics, vol. 27, pp 7534–7539, 2016.
J41 S. Abbaszadeh, S. Ghaffari, S. Siddiquee*, M. Z. Kabir and K. S. Karim, “Characterization
of lag signal in amorphous selenium detectors”, IEEE Transaction on Electron Devices, vol. 63, pp. 704-709, 2016.
J40 S. Siddiquee* and M. Z. Kabir, “Modeling
of transient photocurrent in X-ray detectors: application to a-Se”, Physica Status Solidi C, vol. 13, pp.
73-76, 2016.
J39 S. Siddiquee* and M. Z. Kabir, “Modeling
of photocurrent and lag signals in amorphous selenium X-ray detectors”, Journal of Vacuum Science and Technology A, vol.
33, pp. 041514, 2015.
J38 M. Z. Kabir, “Dark current mechanisms
in amorphous selenium-based photoconductive detectors: an overview and
re-examination”, Journal of Material
Science: Materials in Electronics, vol. 26, pp. 4659–4667, 2015.
J37 N. Hijazi* and M. Z. Kabir, “Mechanisms
of temperature and field-dependent effective drift mobilities and impact
ionization coefficients in amorphous selenium”, Canadian Journal of Physics, vol. 93 (11), pp. 1407-1412, 2015.
J36 M. Z. Kabir and N. Hijazi*, “Temperature and field dependent
effective hole mobility and impact ionization at extremely high fields in
amorphous selenium”, Applied Physics Letters, vol. 104, pp.
192103, 2014.
J35 S. M. Arnab* and M.
Z. Kabir, “An analytical model for analyzing the
current-voltage characteristics of bulk heterojunction organic solar cells”, Journal
of Applied Physics, vol. 115, pp. 034504, 2014.
J34 F. Manouchehri*,
P. Valizadeh, and M. Z. Kabir, “Determination of subband energies and 2DEG characteristics of AlxGa1-x
N/GaN heterojunctions using variational method” Journal
of Vacuum Science and Technology A, vol. 32, pp. 021104, 2014.
J33 F. Manouchehri*,
P. Valizadeh, and M. Z. Kabir, “Physics-based analysis of low frequency drain noise-current in AlxGa1-xN/GaN
HFETs” J. Physics D: Applied
Physics, vol. 47, pp. 085104, 2014.
J32 M. Z. Kabir, “Transient and steady-state dark current
mechanisms in polycrystalline mercuric iodide X-ray imaging detectors”, Nuclear Instruments and Methods in Physics
Research A, vol. 736, pp. 156–160, 2014.
J31 M. Z. Kabir and S.-A. Imam*, “Determination of deep
trapping states of the hole blocking layer in multilayer amorphous selenium
X-ray detectors using transient dark current analysis”, Canadian Journal of Physics, vol. 92, pp. 641-644, 2014.
J30 S. M. Arnab* and M.
Z. Kabir, “Modeling of the Effects of Charge Transport on
Voltage-Dependent Photocurrent in Ultra-Thin CdTe Solar Cells”, Journal of Vacuum Science and Technology A,
vol. 31, pp. 061201, 2013.
J29 F. Manouchehri*,
P. Valizadeh, and M. Z. Kabir, “Temperature-Dependent Investigation of Low Frequency Noise
Characteristics of Mesa-, Fin-, and Island-Isolated AlGaN/GaN HFETs” Solid State Electronics, vol. 89, pp. 01, 2013.
J28 M. Z. Kabir, and S. -A. Imam*, “Transient and
steady-state dark current mechanisms in amorphous selenium avalanche radiation
detectors”, Applied Physics Letters,
vol. 102, pp. 153515, 2013.
J27 S. A. Mahmood*, M.
Z. Kabir, O. Tousignant, and J. Greenspan “Investigation of Ghosting Recovery Mechanisms
in Selenium X-ray Detector Structures for Mammography”, IEEE Transaction on Nuclear Science, vol. 59, pp. 597-604, 2012.
J26 M. A. Mannan*, M. S. Anjan*, and M. Z. Kabir, “Modeling of the current-voltage characteristics of thin film solar cells”, Solid State Electronics, vol. 63, pp. 49-54, 2011.
J25 M. S. Anjan* and M. Z. Kabir, “Modeling
of the current-voltage characteristics of CdS/CdTe solar cells”, Physica Status Solidi A, 208, no. 8, pp.
1813-1816, 2011.
J24 M. Z. Kabir, M.
W. Rahman*, and W. Y
Shen*, “Modelling of DQE of direct conversion X-ray imaging detectors
incorporating charge carrier trapping and K-fluorescence,”
IET Circuits Devices and Systems,
vol. 5, pp. 222-231, 2011.
J23 S. A. Mahmood* and M.
Z. Kabir, “Dark current mechanisms in stabilized amorphous selenium
based n-i detectors for x-ray imaging applications”, Journal of Vacuum Science and Technology A, vol. 29, pp.
031603, 2011.
J22 M. H. Chowdhury* and M. Z. Kabir, “Electrical
properties of grain boundaries in polycrystalline materials under intrinsic or
low doping”, Journal of Physics D: Applied
Physics, vol. 44, pp.
015102, 2011.
J21 M. Z. Kabir, L.
Chowdhury, G. DeCrescenzo, O. Tousignant, S. O. Kasap,
and J. A. Rowlands, “Effect of repeated x-ray exposure on the resolution of
amorphous selenium based x-ray imagers,” Medical
Physics, vol. 37, pp. 1339-1349, 2010.
J20 S. A.
Mahmood*, R V R Murthy, M Z Kabir and V Dutta, "The role of bulk and interface
states on performance of a-Si:H p-i-n solar cells using reverse current-voltage
technique", J. Phys. D: Applied
Physics, vol. 42,
145115, 2009.
J19 S. A. Mahmood* and M.
Z. Kabir, "Modeling of transient and steady-state dark current
in amorphous silicon p-i-n photodiodes", Current Applied Physics, vol. 9, pp.
1393–1396, 2009.
J18 F. Manouchehri*, M. Z. Kabir, O. Tousignant, H. Mani, and V. K. Devabhaktuni, "Time and exposure dependent X-ray
sensitivity in multilayer amorphous selenium detectors", J. Phys. D: Applied Physics, vol. 41, 235106, 2008.
J17 M. Z. Kabir, "Effects of
charge carrier trapping on polycrystalline PbO X-ray imaging detectors", Journal
of Applied Physics, vol. 104, 074506, 2008.
J16 S. A. Mahmood*, M. Z. Kabir, O. Tousignant, H. Mani, J.
Greenspan, and P. Botka ,
"Dark current in multi-layer amorphous selenium X-ray imaging detectors", Applied Physics
Letters, vol. 92, pp. 223506, 2008.
Selected Conference
Proceedings
C17 A. Camlica, D. Lee, H. Jang,
S. M Arnab*, Y. Fang, M. Z. Kabir, K. S. Karim, “Performance of amorphous selenium
based unipolar charge sensing detector for photon-counting X-ray imaging,” Proc.
SPIE – Int. Soc. Opt. Eng., vol. 11312, 113120G, 2020.
C16 N. Hijazi* and M. Z. Kabir, “Modeling of Temperature and Field Dependent Effective Hole
Mobility at High Fields in Amorphous Selenium,” Proc. IEEE Nuclear Science Symposium and Medical
Imaging Conference, 2014.
C15 M. Z. Kabir, and S. -A.
Imam*, “Transient and steady-state dark current in amorphous selenium avalanche
radiation detectors,” Nanotech 2013, vol. 2, pp. 68-71, 2013.
C14 K. N. Sakib*, S. Williamson and M. Z. Kabir, “Cadmium
Telluride Solar cell: From Device Modeling to Electric Vehicle Battery
Management” Proc. IEEE Transportation Electrification Conference & Expo, pp.
1-8, 2013.
C13 K. N. Sakib*, M. Z. Kabir, and S. Williamson, “Cadmium Telluride
Solar Cell: From Device Modeling to System Implementation,” Proc. IEEE International Conference on
Industrial Technology (ICIT), pp. 1561-1566, 2013.
C12 M. Salehizadeh*, J. Habibi, A.G. Aghdam, and M. Z. Kabir, “Laser
cavity squeezing using optimal servo controller in optomechanical sensors” Proceedings of American Control Conference
(ACC), pp. 5843-5848, 2012.
C11 M. Salehizadeh*, J. Habibi, A.G. Aghdam, and M. Z. Kabir, “H∞
controller design for laser cavity squeezing in optomechanical sensors,” Proceedings of 25th IEEE Canadian
Conference on Electrical and Computer Engineering, pp. 1-6, 2012.
C10 F. Manouchehri*,
P. Valizadeh, and M. Z. Kabir, “Non-Fundamental Low Frequency Noise Theory to
Drain Noise-Current Modeling of AlGaN/GaN HFETs” Proceedings of 21st
International Conference on Noise and Fluctuations (ICNF 2011, Toronto), pp.
224-226, 2011.
C9 S. A. Mahmood*, M.
Z. Kabir, O. Tousignant, J. Greenspan and M. F. Mokam, " Investigation of ghosting recovery techniques
and mechanisms in multilayer selenium X-ray detector structures under low
bias", Proc. of SPIE, vol. 7622, 762216, 2010.
C8 S. A. Mahmood*, M. Z. Kabir, O. Tousignant and H. Mani, “Ghosting
and its recovery mechanisms in multilayer selenium detectors for mammography,” Proc. of
SPIE, vol. 7258, 725860, 2009.
C7 M. Z. Kabir, F. Manouchehri*,
S. A. Mahmood*, V. K. Devabhaktuni, O. Tousignant, H. Mani,
J. Greenspan, P. Botka, "Modeling
of dark current and ghosting in multilayer amorphous selenium X-ray
detectors", Proc. of SPIE, vol. 6913, 69133U, 2008.
C6 N. N. Safavian, G. R. Chaji, M.
Z. Kabir, A. Nathan and J. A. Rowlands, “3-TFT active pixel sensor with
correlated double sampling readout circuit for real-time medical x-ray
imaging,” IEEE North-East Workshop on Circuits and Systems, pp. 265-268, 2006.
C5 M. Z. Kabir, M. Yunus, and S. O. Kasap,
“The effects of large signals on charge collection in photoconductive X-ray
image detectors,” Proc. IEEE Canadian Conference on Electrical and Computer Engineering, pp.
197-199, 2005.
C4 M. Z. Kabir, M. Yunus, S. O. Kasap, O. Tousignant, H. Mani, and P. Gauthier,
“Ghosting mechanisms in a-Se based direct conversion X-ray image sensors,” Proc. SPIE – Int. Soc. Opt. Eng., vol. 5745, pp.
223-231, 2005.
C3 M. Z. Kabir, M. Yunus, and S. O. Kasap,
“Dependence of X-ray
sensitivity of direct conversion X-ray detectors on X-ray exposure and exposure
history,” Proc. SPIE – Int. Soc. Opt.
Eng., vol. 5368, pp. 170-176, 2004.
C2 M. Z. Kabir and S. O. Kasap, “Charge transport and trapping-limited sensitivity and
resolution of pixellated X-ray image detectors,” Proc.
SPIE – Int. Soc. Opt. Eng., vol. 5030, pp. 26-38, 2003.
C1 M. Z. Kabir and S. O. Kasap, “Dependence of the DQE of photoconductive X-ray
detectors on charge transport and trapping,” Proc. SPIE – Int. Soc. Opt. Eng., vol. 4682, pp.
42-52, 2002.