Reliable Electron Devices

Research Group

Faculty Member:

Pouya Valizadeh (Ph.D., P.Eng.)

Current Group Members:

· May Omran, MASc Kuwait University (PhD student from January 2023)

· Tyler Armstrong, BEng. Carleton University (MASc student from September 2024)

Undergraduate Collaborators:

Previous Members:

PhD Graduates:

· Farzin Manouchehri (April 2014): Reliability-driven experimental and theoretical study of low-frequency noise characteristics of AlGaN/GaN HFETs

Current position (updated Nov. 2022): RF HW Developer, Power Amplifiers at Ericsson, Ottawa

· Alireza Loghmany (June 2016): Design, Microfabrication, and Characterization of Polar III-Nitride HFETs

Current position (updated Nov. 2022): Team Leader, Advanced Electronics and Photonics, National Research Council Canada, NRC-CNRC, Ottawa

· Kaveh Rahbardar Mojaver (April 2018): Fabrication and Physics-Based Modeling of Polar AlGaN/GaN and AlInGaN/GaN HFETs

Current position (updated Aug. 2023): Assistant Professor, Colorado State University

· Mehrnegar Aghayan (October 2022): Exploration of the Effects of Isolation-feature Geometry on the Off-state Breakdown Voltage of AlGaN/GaN HFETs

Current position (updated Nov. 2022): GE Global Research Center, NY

· Yatexu Patel (August 2024): Comparative Study of the Effects of Device Geometry on the DC Characteristics, Linearity and Low-Frequency Noise Performance of Lattice-matched InAlN/GaN HFETs

Current position (updated Nov. 2024): postdoctoral researcher, McGill University

MASc Graduates:

· Maziar Moradi (May 2010): Analytical Modeling of Drain-Current Characteristics of AlGaN/GaN HFETs with Incorporation of the Impacts of Virtual-Gate and Transferred-Electron Effect

Current position (updated Nov. 2022): Senior Reliability Engineer, Rivian, San Diego

· Alireza Loghmany (August 2010): Treatment of the Impacts of Transport Inflexion Points and Charge Trapping at the Surface States on Drain Current of AlGaN/GaN HFETs

Current position (updated Nov. 2022): Team Leader, Advanced Electronics and Photonics, National Research Council Canada, NRC-CNRC, Ottawa

· Bandar AlOtaibi (June 2011): Fin and Island Isolation of AlGaN/GaN HFETs and Temperature-dependent Modeling of Drain Current Characteristics of AlGaN/GaN HFETs

Current position (updated Nov. 2022): Assistant Research Professor, King Abdulaziz City for Science and Technology (KACST), Saudi Arabia

· Shayan Dargahi (November 2011): Gallium-Nitride Based Power Electronic Converter Design, Prototyping and Test for Automotive Power Management and Renewable Energy Applications

Current position (updated Nov. 2022): Team Leader, Hardware at Thales, Canada

· Jahirul Sikder (April 2013): AlGaN/GaN HFETs: Current-drive Scalability, Gate-lag and Frequency-dispersion Studies

Current position (updated Nov. 2022): unknown

· Joseph Record (July 2016): Fabrication, Characterization, and Simulation of Gallium-Nitride Heterojunction Field-Effect Transistors

Current position (updated Nov. 2022): Characterization Engineer at GaN Systems Inc., Ottawa

· Jean-Lou Gosselin (December 2017): Theoretical Assessment of the Influence of Mesa Size and Shape on the Two-Dimensional Electron Gas Properties of AlGaN/GaN Heterojunctions

Current position (updated Nov. 2022): Performance Analyst, Solar Energy at Innergex, Montreal

· Mauricio Buitrago (August 2021): Intricacies of Modeling and Analysis of DC Characteristics of Single- and Multi-Channel Laterally-Gated AlGaN/GaN Heterojunction Field Effect Transistors

Current position (updated March 2023): Component Engineer, MDA, Montreal

MEng graduates:

· Iqbalpreet Singh (December 2020): Drain-Bias Dependent Study of Reverse Gate-Leakage Current in AlGaN/GaN HFETs

Current position (updated Nov. 2022): Junior Reliability Engineer, GaN Systems Inc., Ottawa

Undergraduate Collaborators:

· Nosa Mohammad

· Sathia Devi Tirou

· Walder Andre

· Raoul Michel Gnagne

· Atena Zolghadr

· Eric Karemera

· Ralph Chammah