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Pouya Valizadeh
Professor of Electrical Engineering |
>Department of Electrical and Computer Engineering >Faculty of Engineering and Computer Science |
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Theses |
Automation of Deformable Models for MR Image Segmentation by Combining
Capabilities of Deformable Models and Clustering Methods |
M.Sc. Thesis University of
Tehran/IRAN |
September 1999 |
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Electrical Characterization of AlGaN/GaN MODFET: A Reliability-driven
Low Frequency Noise -based Study |
Ph.D. Dissertation The |
April 2005 |
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Book |
Field
Effect Transistors, A Comprehensive Overview: From Basic Concepts to Novel
Technologies |
Wiley |
February 2016 |
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Conference papers |
Image processing |
Devising a New Combinational Method for
Brain MR Image Segmentation Valizadeh, Soltanianzadeh |
Medical Image Processing symposium,
Intelligent systems research institute, Tehran/IRAN (In Persian) |
November 1999 |
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A Clustering
Guided Deformable Model for MRI Segmentation Valizadeh, Soltanianzadeh |
Medical imaging 2000: Proc. of SPIE Vol.
3979 |
February 2000 |
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Automation of MR
Image Segmentation Using Capabilities of Clustering Methods and Deformable
Models Valizadeh, Soltanianzadeh |
Best paper of the 9th
Iranian Biomedical Engineering Conference (In Persian) |
February 2000 |
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Microelectromechanical systems (MEMS) |
A High
Sensitivity Intermodulation-Based Accelerometer Navid, Valizadeh, Ghovanloo |
Conference on
Optoelectronic and Microelectronic Materials and Devices |
December 2002 |
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A CMOS Compatible MEMS-Based Voltage Multiplier for
On-Chip Generation of Large DC Voltages Valizadeh,
Yang, Famouri |
Conference on
Optoelectronic and Microelectronic Materials and Devices |
December 2006 |
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III-V Devices |
Characterization
and Analysis of Gate and Drain Low Frequency Noise in AlGaN/GaN HEMTs Hsu, Valizadeh, Pavlidis,
Moon, Micovic, Wong,
Hussain |
IEEE Lester Eastman Conference on High Performance Devices |
August 2002 |
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Large-Signal Linearity and Efficiency of AlGaN/GaN MODFETs Hsu, Valizadeh, Pavlidis,
Moon, Micovic, Wong, Hussain |
European Microwave , GaAs Symposium |
October 2002 |
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Impact of RF
Stress on Dispersion and Power Characteristics of AlGaN/GaN HEMTs Hsu, Valizadeh, Pavlidis,
Moon, Micovic, Wong, Hussain |
GaAs IC symposium |
October 2002 |
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Enhancement-Mode
AlxGa1-xN/GaN Modulation Doped Field Effect Transistors Valizadeh, Alekseev, Pavlidis, Yun,
Morkoç |
27th Workshop on Compound Semiconductor
Devices and Integrated Circuits held in Europe (WOCSDICE) |
May 2003 |
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Low Frequency
Noise-Based Monitoring of the Effects of RF and DC Stress on AlGaN/GaN
MODFETs Valizadeh, Pavlidis
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GaAs IC symposium |
November 2003 |
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AlGaN/GaN High Electron Mobility Transistor
(HEMT) Reliability Pavlidis, Valizadeh, Hsu |
European Microwave, GaAs Symposium |
October 2005 |
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Anomalies in Power Handling of AlGaN/GaN
MODFETs Valizadeh |
ICEE07 |
May 2007 |
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Non-Fundamental Low Frequency Noise Theory:
Drain Noise-Current Modeling of AlGaN/GaN HFETs Manouchehri, Valizadeh, Kabir |
ICNF’11 International Conference on Noise and Fluctuations |
June 2011 |
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Proof-of-Concept Gallium-Nitride Power
Electronic Converter Design for HEV Energy Management Application Dargahi, Valizadeh, Williamson |
VPPC’11 |
September 2011 |
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Low Frequency Drain Noise Characteristics
of Polarization-Engineered AlGaN/GaN HFETs Manouchehri, Valizadeh, Kabir |
EDSSC’13 International Conference on Electron Devices and Solid State Circuits |
June 2013 |
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Temperature-Dependent Study of Gate-Lag and
RDS-Dispersion of Island-, Fin-, and Mesa-Isolated AlGaN/GaN HFETs Sikder, Loghmany, Valizadeh |
EDSSC’13 International Conference on Electron Devices and Solid State Circuits |
June 2013 |
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Experimental and Theoretical Study of Low
Frequency Drain Noise-Current Characteristics of AlGaN/GaN HFETs Manouchehri, Valizadeh, Kabir |
CSSTC’13 Canadian Semiconductor Science and Technology Conference |
August 2013 |
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Journal papers |
Low Frequency Noise of AlGaN/GaN MODFETs: A Comparative
Study of Surface, Barrier and Heterointerface Effects Valizadeh, Pavlidis, Shiojima, Makimura, Shigekawa |
Journal of |
August 2005 |
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Effects of RF and DC Stress on AlGaN/GaN
MODFETs: A Low Frequency Noise-based Investigation Valizadeh, Pavlidis |
IEEE
Transactions on Device and Materials Reliability, vol.
5, no. 3, pp. 555-563 |
September 2005 |
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Investigation of the Impact of Al Mole
Fraction on the Consequences of RF Stress on AlxGa1-x
N/GaN MODFETs Valizadeh, Pavlidis |
IEEE
Transactions on Electron Devices, vol. 52,
no. 9, pp. 1933-1939 |
September 2005 |
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Anomalous Effects of Temperature and UV
Illumination on the Operation of AlGaN/GaN MODFET Valizadeh, Alekseev, Pavlidis, Yun,
Morkoç |
Journal of |
February 2006 |
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Low Frequency Noise -Based Degradation
Prediction of AlxGa1-xN/GaN MODFETs Valizadeh, Pavlidis |
IEEE
Transactions on Device and Materials Reliability, vol.
6, no. 3, pp. 479-485 |
September 2006 |
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High-Temperature, Very-Low Frequency
Noise-Based Investigation of Slow Transients in AlGaN/GaN MODFETs Valizadeh |
IEEE
Transactions on Device and Materials Reliability, vol.
8, no. 2, pp. 265-271 |
June 2008 |
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Analytical Modeling of Current-Collapse in
AlGaN/GaN HFETs According to the Virtual Gate Concept Moradi, Valizadeh |
IEEE
Transactions on Device and Materials Reliability, vol 10, no. 2, pp. 287-294 |
June 2010 |
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Influence of Transferred-Electron Effect on
Drain-Current Characteristics of AlGaN/GaN HFETs Moradi, Valizadeh |
Journal of
Applied Physics, vol. 109, no. 2, 024509 1-8 |
January 2011 |
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Analytical Modeling of Drain-Current
Characteristics of AlGaN/GaN HFETs with Full Incorporation of Steady-State
Velocity Overshoot Loghmany, Valizadeh |
Journal of
Physics D: Applied Physics, vol. 44, 125102 1-8 |
March 2011 |
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Fin- and Island-Isolated AlGaN/GaN HFETs Valizadeh, AlOtaibi |
IEEE
Transactions on Electron Devices, vol. 58, no. 5, pp. 1404-1407 |
May 2011 |
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Investigation of the High Temperature
Operation of AlGaN/GaN HFETs via Studying the Impact of Temperature
Dependency of Drift Transport Characteristics AlOtaibi, Valizadeh |
IEEE
Transactions on Device and Materials Reliability, vol. 12, no. 3, pp. 547-553 |
September 2012 |
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Temperature-Dependent Investigation of Low
Frequency Noise Characteristics of Mesa-, Fin-, and Island-Isolated AlGaN/GaN
HFETs Manouchehri, Valizadeh, Kabir |
Journal of
Solid State Electronics, vol. 89, pp. 1-6 |
November 2013 |
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Scalability of the Drain-Current Drive of
AlGaN/GaN HFETs with Gate-Length Sikder, Valizadeh |
Journal of
Solid State Electronics, vol. 89, pp. 105-110 |
November 2013 |
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Physics-Based Analysis of Low Frequency
Drain Noise-Current in AlxGa1-xN/GaN HFETs Manouchehri, Valizadeh, Kabir |
Journal of
Physics D: Applied Physics, vol. 47, 085104 1-8 |
February 2014 |
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Determination of Subband Energies and 2DEG
Characteristics of AlxGa1-xN/GaN Heterojunctions Using
Variational Method Manouchehri, Valizadeh, Kabir |
Journal of
Vacuum Science and Technology A, vol. 32, no.2, 021104-1-8 |
March/April 2014 |
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Impact of Isolation-Feature Geometry on
Self-Heating of AlGaN/GaN HFETs Loghmany, Valizadeh, Record |
IEEE
Transactions on Electron Devices, vol. 61, no.9, pp. 3152-3158 |
September 2014 |
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Alternative Isolation-Feature Geometries
and Pinch-off Voltage Variation in Polar AlGaN/GaN HFETs Loghmany, Valizadeh |
Journal of
Solid State Electronics, vol. 103, pp. 162-166 |
January 2015 |
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Reverse Gate-Current of AlGaN/GaN HFETs: Evidence
of Leakage at Mesa Sidewalls Rahbardar-Mojaver, Valizadeh |
IEEE
Transactions on Electron Devices, vol. 63, no. 4, pp. 1444-1449 |
April 2016 |
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Theoretical Evaluation of Two Dimensional
Electron Gas Characteristics of Quaternary AlxInyGa1-x-yN/GaN
Hetero-junctions Rahbardar-Mojaver, Manouchehri, Valizadeh |
Journal of
Applied Physics, vol. 119, no. 15, 154502 1-7 |
April 2016 |
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Use of a Bilayer Lattice-Matched AlInGaN
Barrier for Improving the Channel Carrier Confinement of Enhancement-Mode
AlInGaN/GaN Hetero-Structure Field-Effect Transistors Rahbardar-Mojaver, Gosselin, Valizadeh |
Journal of
Applied Physics, vol. 121, no. 24, 244502 1-6 |
June 2017 |
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Modeling the Reverse Gate-Leakage Current
in GaN-Channel HFETs: Realistic Assessment of Fowler-Nordheim and Leakage at
Mesa Sidewalls Rahbardar-Mojaver, Valizadeh |
IEEE
Transactions on Electron Devices, vol. 65, no. 8, pp. 3156-3162 |
August 2018 |
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Theoretical Evaluation of the Effects of
Isolation Feature Size and Geometry on the Built-in Strain and 2-D Electron
Gas Density of AlGaN/GaN Heterostructures Gosselin, Valizadeh |
IEEE
Transactions on Electron Devices, vol. 65, no. 11, pp. 4800-4806 |
November 2018 |
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Drain-Bias Dependent Study of Reverse
Gate-Leakage Current in AlGaN/GaN HFETs Singh, Rahbardar-Mojaver,
Valizadeh |
IEEE
Transactions on Electron Devices, vol. 68, no. 2, pp. 503-509 |
February 2021 |
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Correlation Between Sidewall Surface States
and Off-State Breakdown Voltage of AlGaN/GaN HFETs Aghayan, Valizadeh |
Journal of
Applied Physics, vol. 130, no. 11, 115703 1-10 |
September 2021 |
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The Isolation Feature Geometry Dependence
of Reverse Gate-Leakage Current of AlGaN/GaN HFETs Aghayan, Valizadeh |
Physica Scripta,
98, 095508 1-9 |
September 2023 |
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A Comparative Study on the Effects of
Planarity of Access Region on the Low-Frequency Noise Performance of InAlN/GaN HFETs Patel, Valizadeh |
IEEE Journal
of Electron Devices Society, 12, pp. 338-344 |
May 2024 |
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Investigation of the DC Performance and
Linearity of InAlN/GaN HFETs via Studying the
Impact of the Scaling of LGS and LG on the Source
Access Resistance Patel, Valizadeh |
IEEE Journal
of Electron Devices Society, 12, pp. 525-533 |
July 2024 |
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Impact of the Scaling of LGS and
LG on the On-state Breakdown Voltage of InAlN/GaN
HFETs with Localized Fin Under the Gate Electrode Patel, Valizadeh |
IEEE Journal
of Electron Devices Society, 12, pp. 645-650 |
September 2024 |
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