In the past decades, electronic computers have grown more powerful as their basic subunit, the MOSFETs, has shrunk. However, the laws of quantum mechanics and the limitations of fabrication techniques will soon prevent further reduction in the size of conventional MOSFETs. During the next 10 to 15 years, as the smallest features on mass-produced transistors shrink from their present lengths of 250 nm to 50 nm and below, the devices will become more difficult and costly to fabricate. In addition, they may no longer function effectively in ultra-densely integrated electronic circuits. In order to continue the miniaturization of circuit researchers are investigating several alternatives to the transistor for ultra-dense circuitry.

Resonant Tunneling Devices (RTD’s) is one of the promising nano scale solid-state replacements for the conventional transistors. The RTD is an ultrahigh frequency device showing a negative differential resistance (NDR) and can perform as both switch and amplifier, just like the conventional MOSFET’s. In fact, RTD’s have two or more NDR regions which can be used in multivalued logic applications to reduce the circuit complexity with higher storage density. In this project, students will design and implement a terahertz oscillator circuit to provide variable frequency and amplitude. The proposed circuits will be tested by circuit simulations.
 

Students should have passed ELEC 311, ELEC 321, ELEC421 and COEN 312.

Good knowledge on electronics, solid-state devices and logic circuits will be required to the success of this project.